| PART |
Description |
Maker |
| IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| LY62L12816 LY62L12816E LY62L12816GL LY62L12816GV L |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| BS616LV201606 BS616LV1010ECG70 BS616LV1010DIG55 BS |
Very Low Power CMOS SRAM 128K X 16 bit
|
Brilliance Semiconductor
|
| UT62L12816BS-70LI UT62L12816BS-70LLI UT62L12816BS- |
128K x 16 BIT LOW POWER CMOS SRAM
|
UTRON Technology
|
| BS62LV1027TIP70 BS62LV1027SIP70 BS62LV1027TCP70 BS |
Very Low Power CMOS SRAM 128K X 8 bit
|
Brilliance Semiconducto...
|
| LY6212816 LY6212816GV LY6212816LL LY6212816LLE LY6 |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY621024 |
128K X 8-Bit Low Power CMOS SRAM
|
Lyontek
|
| K6F2016U4E K6F2016U4E-F DSK6F2016U4E DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6F2016V4E K6F2016V4E-EF55 K6F2016V4E-EF70 K6F2016 |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY628100BLLG HY628100BLT1-I HY628100B HY628100B-E |
128K x8 bit 5.0V Low Power CMOS slow SRAM
|
HYNIX[Hynix Semiconductor]
|
| BS616UV2019AIP10 BS616UV2019DIG10 |
Ultra Low Power CMOS SRAM 128K X 16 bit
|
Brilliance Semiconducto...
|
| IS62WV1288ALL-70BI IS62WV1288BLL-45TI IS62WV1288BL |
128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 128K X 8 STANDARD SRAM, 45 ns, PDSO32
128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 128K X 8 STANDARD SRAM, 45 ns, PBGA36
|
Integrated Silicon Solution, Inc.
|
